Investigations at Metal/Si Surfaces and Interfaces

The interaction of semiconductor surfaces with deposited metals is very important for understanding many aspects of the behavior of microelectronic devices. The early stages of metal-semiconductor interface formation are amenable to analysis with surface sensitive techniques. The most important characteristic of metal semiconductor interface is nature of the potential barrier between the Fermi level in the metal and the majority carrier band edge of semiconductor of that interface. The study of metal / semiconductor (Si) reactions are of great importance present in every semiconductor device.The present book is an outcome of investigations of structural, morphological, magnetic and electrical behaviour of metal (Co, Cr, Ni) / semiconductor (Si) system.

Autorentext
Dr. Shivani Agarwal obtained her Ph.D. in 2007 from University of Rajasthan-Jaipur,India.She has worked as ICTP-TRIL fellow at ENEA-Casaccia, Rome.She is working as PostDoctoral Fellow at University of Rajasthan.Prof.I.P.Jain is CSIR-Emeritus Scientist & founder Director of Centre for Non-Conventional Energy Resources at University of Rajasthan.