Low Power and Reliable SRAM Memory Cell and Array Design

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The recent development of advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses issues in the design of SRAM memory cells for advanced CMOS technology, including variability, leakage and reliability.

Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

Basic book on memory design Combines the aspects of SRAM technique, analysis and design A valuable reference work for researchers and engineers alike Includes supplementary material: sn.pub/extras

Inhalt

Preface.- Introduction.- Fundamentals of SRAM Memory Cell.- Electrical Stability.- Sensitivity Analysis.- Memory Cell Design Technique for Low Power SOC.- Array Design Techniques.- Dummy Cell Design.- Reliable Memory Cell Design.- Future Technologies

Weitere Informationen

  • Allgemeine Informationen
    • GTIN 09783642270185
    • Genre Elektrotechnik
    • Auflage 2011
    • Editor Kenichi Osada, Koichiro Ishibashi
    • Sprache Englisch
    • Lesemotiv Verstehen
    • Anzahl Seiten 156
    • Größe H235mm x B155mm x T9mm
    • Jahr 2013
    • EAN 9783642270185
    • Format Kartonierter Einband
    • ISBN 3642270182
    • Veröffentlichung 27.11.2013
    • Titel Low Power and Reliable SRAM Memory Cell and Array Design
    • Untertitel Springer Series in Advanced Microelectronics 31
    • Gewicht 248g
    • Herausgeber Springer Berlin Heidelberg

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