Mathematical analysis for thin film capacitance via homogenization

Models for distributed capacitance in a thin film
are derived in the form of a system of local RC
diffusion equations coupled by a global elliptic
equation. Such models contain the local geometry of
the distributed capacitance on which charge is
stored and the exchange of current flux on its
interface with the medium.
Certain singular limits are characterized, and the
resulting degenerate initial-boundary-value problems
are shown to be well posed.

Autorentext
Professor at Dankook University.

Klappentext
Models for distributed capacitance in a thin film are derived in the form of a system of local RC diffusion equations coupled by a global elliptic equation. Such models contain the local geometry of the distributed capacitance on which charge is stored and the exchange of current flux on its interface with the medium. Certain singular limits are characterized, and the resulting degenerate initial-boundary-value problems are shown to be well posed.