MISISFET and DQWRTD MOSFET for Low Power Applications

The book mainly focuses on the problem of high leakage which contributes to excessive standby power consumption. As it is known that the entire semiconductor industry is struggling with the heat of chips increasing exponentially as the number of transistors increases. The large leakage current may thus become a scaling showstopper, if alternative solutions are not provided to maintain it at an acceptable level. Although, to extend the scenario of transistor scaling and Moore's Law, a lot of research has been done in the recent past. Here in the book it is categorized as - research on alternative gate dielectrics like hafnium dioxide (HfO2), zirconium dioxide (ZrO2) and titanium dioxide (TiO2) and alternative device geometries like Double Gate MOSFET (DGMOSFET), tri-gate, gate all around) structures, silicon nanowire transistors (SNWT) etc. Effective gate control can be achieved by the multigate structures. High leakage current in deep-sub micrometer regimes is coming a significant contributor to power dissipation of CMOS circuits as threshold voltage, channel length, and gate oxide thickness are reduced.

Autorentext

Tarun Chaudhary received BE degree inElectronics and Communication engineeringfrom UIET, Panjab University,Chandigarh, in 2010. She receivedMTech degree in VDAT from NITHamirpur, HP, India. She is currentlypursuing her PhD degree at NIT Hamirpur,HP, India. Her research interestsinclude modeling and simulation ofnanoscale devices.