Modeling Of Novel Mosfet Devices

The classical method of MOSFET scaling has served us well for more than 30 years. The new era of scaling is one where material and structure innovation are just as important as dimensional scaling. The dimensional scaling leads to short channel effects (SCEs) which are going to severely affect the device performance. The content of this book may be used to analyze the effect of SCEs on the device performance. The book also provides a detailed analysis of potential distribution in the Silicon and Germanium films, which is extremely important for the evaluation of SCEs in a given MOSFET structure. Further, it also discusses the important technological parameters related to the design and optimization of MOSFET devices. Since, very few models are available to examine all the dominant short channel effects in novel MOS devices, the book is going to be extremely useful for MOS device and circuit designers.

Autorentext

Dr. Sudhansh Sharma : PhD,M.Sc(Physics),M.Tech(Computer Science):Studied at University of Delhi and Institution Of Electronics and Telecommunication Engineers(IETE), Chaudhary Charan Singh University, India. Working as Assistant Professor in School of Computers and Information Sciences(SOCIS), Indira Gandhi National Open University(IGNOU), INDIA.