Monolithic Nanoscale Photonics-Electronics Integration in Silicon and Other Group IV Elements

Silicon technology is evolving rapidly, particularly in board-to-board or chip-to chip applications. Increasingly, the electronic parts of silicon technology will carry out the data processing, while the photonic parts take care of the data communication. For the first time, this book describes the merging of photonics and electronics in silicon and other group IV elements. It presents the challenges, the limitations, and the upcoming possibilities of these developments.

The book describes the evolution of CMOS integrated electronics, status and development, and the fundamentals of silicon photonics, including the reasons for its rapid expansion, its possibilities and limitations. It discusses the applications of these technologies for such applications as memory, digital logic operations, light sources, including drive electronics, optical modulators, detectors, and post detector circuitry. It will appeal to engineers in the fields of both electronics and photonics who need to learn more about the basics of the other field and the prospects for the integration of the two.

Autorentext
Henry H. Radamson received an M.Sc. degree in physics and the Ph.D. degree in semiconductor materials from Linköping University in Sweden, in 1989 and 1996, respectively. In 1997, he joined the Royal Institute of Technology in Stockholm as a senior scientist, where he has been an Associate Professor since 2001. Lars Thylén received the M. Sc. degree in Electrical Engineering and the Ph. D. degree in Applied Physics in 1972 and 1982, respectively, both from the Royal Institute of Technology (KTH) in Stockholm. From 1982 to 1992 he was employed by Ericsson. Since 1992, he is a professor of Photonics and Microwave Engineering at the school of Information and Communications Technology, KTH, Stockholm, heading the Laboratory of Photonics and Microwave Engineering.

Inhalt
Introduction: Scope and purpose of the book

1. Metal oxide semiconductor field effect transistors

   Part one The basics of Metal oxide semiconductor field effect transistors

   Part two: Strain engineering in group IV materials

   Part three: Chemical vapor deposition (CVD) of group IV materials

   Part four: Improvement of the channel mobility

2. Basics of integrated photonics

3. Silicon and group IV photonicsPart One: Silicon photonic elements for integrated photonics

   Part two: Bandgap engineering in group IV materials for photonic application

   Part three: Group IV-based detectors and lasers

   Part four: Graphene, new photonic material

4. Moore's law for photonics and electronics

5. Approaches for monolithic integration of group IV based photonics and electronics circuits, current status and visions for the future Part one: Light emitting sources in Si as photonic material

   Part two: Competing and complementing technologies and materials to an all group IV based photonics approach

   Authors' final words