MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch

This book provides analysis and discusses the design of various MOSFET technologies. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters as well as testing of MOSFETs parameters using image acquisition.

Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET Explains the design of RF switches using the technologies presented and simulates switches Verifies parameters and discusses feasibility of devices and switches Includes supplementary material: sn.pub/extras

Autorentext
Dr. Viranjay M. Srivastava is an Assistant Professor at Jaypee University of Information Technology. Dr. Ghanshyam Singh is an Associate Professor at Jaypee University of Information Technology.

Inhalt

Introduction.- Design of Double-Pole Four-Throw RF Switch.- Design of Double-Gate MOSFET.- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET.- Cylindrical Surrounding Double-Gate RF MOSFET.- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch.- Testing of MOSFET Surfaces Using Image Acquisition.- Conclusions and Future Scope.