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Nanowire Field Effect Transistors: Principles and Applications
Details
This book covers the basic physics and electronics leading to the conceptual understanding of nanowire field effect transistors (NWFET) and its practical aspects. It discusses mainstream applications and emphasizes their basic concepts.
Nanowire Field Effect Transistor: Basic Principles and Applications places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET.
During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes.
Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
Inhalt
Quantum Wire and Sub-Bands.- Carrier Concentration and Transport.- P-N Junction Diode: I-V Behavior and Applications.- Silicon Nanowire Field Effect Transistor.- Fabrication of Nanowires and their Applications.- Characterization of Nanowire Devices under Electrostatic Discharge Stress Conditions.- Green Energy Devices.- Nanowire Field Effect Transistors in Optoelectronics.- Nanowire BioFETs: An Overview.- Lab On a Wire: Application of Silicon Nanowires for Nanoscience and Biotechnology.- Nanowire FET Circuit Design An Overview.
Weitere Informationen
- Allgemeine Informationen
- GTIN 09781493945726
- Lesemotiv Verstehen
- Genre Electrical Engineering
- Auflage Softcover reprint of the original 1st edition 2014
- Editor Yoon-Ha Jeong, Dae Mann Kim
- Sprache Englisch
- Anzahl Seiten 296
- Herausgeber Springer New York
- Größe H235mm x B155mm x T17mm
- Jahr 2016
- EAN 9781493945726
- Format Kartonierter Einband (Kt)
- ISBN 1493945726
- Veröffentlichung 23.08.2016
- Titel Nanowire Field Effect Transistors: Principles and Applications
- Gewicht 452g