Numerical Modeling of Junctionless FET Using Finite Difference Method

Insight of Junctionless MOSFET: Unfold Types of MOSFETs, Necessity for Miniaturization, Short Channel Effects in Scaling of Devices, Techniques to Reduce Short Channel Effects, Device Modeling, Analytical Modeling of MOSFET, Parameters Involved in the Design of the Device, Performance Analysis of the Device, Channel and Gate Engineering, Experimental analysis of Dual Material Surrounding Gate Junctionless MOSFETs Using Finite Difference Method.

Autorentext

Dr. S.PREETHI is working as an Assistant Professor in the Department of ECE in Sri Krishna College of Technology, Coimbatore.Ms. ANJU ASOKAN is working as an Assistant Professor in the Department of ECE in Sri Krishna College of Technology, Coimbatore.