Optimization of RF-Transistor from Device to Circuit Level for PAs

This book presents my PhD research work which was focused to design and develop RF-LDMOS transistor in the field of communication systems for power amplifiers applications that can handle high power and high data rates for the emergence of new communication standards like 3G, 4G and LTE etc. LDMOS devices have been dominating in the communication field since last two decades and widely used in PA developments. Therefore, this book deals with the optimization of RF-LDMOS transistor and its evaluation in different PA classes, such as linear, switching, wide band and multi-band applications etc. Some techniques are also developed in Technology CAD (TCAD) using large signal time domain computational load-pull (CLP) methods. The main motivation behind this work was to study an accurate large signal characterization of RF-transistors using CLP techniques in TCAD and its validation with experimental data. As being author, I recommend this book for new device engineers/researchers to understand the optimized parameters of RF devices and its impact on system level design.

Autorentext

Dr. Ahsan Kashif obtained M.S. and Ph.D. degrees from the LinkÖping University, LinkÖping, Sweden. During studies, he performed research work in the design of different RF devices such as PIN diode, Schottky diode and LDMOSFET devices. Currently he is working at the CESAT, Islamabad, Pakistan and exploring GaN-on-Si HEMT based RF applications.