Optoelectronic Properties of Gaussian DQWell for RTD Application

In this work, electronic and optoelectronic properties of Gaussian double quantum well is numerically computed in presence of electric field applied along the direction of quantum confinement. Structural parameters and material composition are tuned in order to study the variation of eigenenergies of lowest three levels and density of states. Tailorable carrier states and controllable intersubband transition are the features that can be utilized for design of photodetector. Absorption coefficient and oscillator strength are also calculated for the same purpose. Results are compared with ideal parabolic potential profile. Kane type band nonparabolicity of first order is considered for realistic simulation. Obtained results have profound importance for design of quantum well based optoelectronic devices.

Autorentext

Arpan Deyasi is presently working as Asst Prof in the Dept of ECE in RCCIIT, INDIA. He has 11.5 years of professional experience. He received B.Sc(Hons), B.Tech, M.Tech from University of Calcutta. He is working in the area of semiconductor nanostructure and semiconductor photonics. He has published more than 150 research papers with 2 monographs.