Photoelectric measurements of silicon doped with manganese and sulfur

The study of electrical and photoconductivity, as well as optical absorption spectra of silicon doped with various impurities is of particular interest in terms of developing promising samples of silicon photocells with extended spectral sensitivity, in particular in the IR region. In this work the results of studies of the spectra of photoconductivity, as well as electrical measurements of no-load voltage and short-circuit current of single crystal silicon samples, alloyed with manganese and sulfur impurities with layer-by-layer removal of the surface. A review of various approaches to increase the efficiency of photoconversion is also given. The book may be of interest to researchers in the field of solid state physics, developers of photocells, as well as students in semiconductor physics.

Autorentext

Mavlyanov Abdulaziz Shavkatovich, PhD em Física e Matemática, Professor Associado no SE "Uzbek-Japanese Youth Innovation Centre" no TSTU.