Piezoelectric Accelerometers with Integral Electronics

This book provides an invaluable reference to Piezoelectric Accelerometers with Integral Electronics (IEPE). It describes the design and performance parameters of IEPE accelerometers and their key elements, PE transducers and FET-input amplifiers. Coverage includes recently designed, low-noise and high temperature IEPE accelerometers. Readers will benefit from the detailed noise analysis of the IEPE accelerometer, which enables estimation of its noise floor and noise limits. Other topics useful for designers of low-noise, high temperature silicon-based electronics include noise analysis of FET amplifiers, experimental investigation and comparison of low-frequency noise in different JFETs and MOSFETs, and ultra-low-noise JFETs (at level of 0.6 nV/Hz). The discussion also includes ultra-low-noise (at level of 3 ng/Hz) seismic IEPE accelerometers and high temperature (up to 175 C) triaxial and single axis miniature IEPE accelerometers, along with key factors for their design.

• Provides a comprehensive reference to the design and performance of IEPE accelerometers, including low-noise and high temperature IEPE sensors;
• Includes noise analysis of the IEPE accelerometer, which enables estimation of the its noise floor and noise limits;
• Describes recently design of ultra-low-noise (at level of 3 ng/Hz) IEPE seismic accelerometers and high temperature (up to 175 C) triaxial and single axis miniature IEPE accelerometers;
• Compares low-frequency noise in different JFETs and MOSFETs including measurement results of ultra-low-noise (at level of 0.6 nV/Hz) JFET;
• Presents key factors for design of low-noise and high temperature IEPE accelerometer and their electronics.

Provides a comprehensive reference to the design and performance of IEPE accelerometers, including low-noise and high temperature IEPE sensors Includes noise analysis of the IEPE accelerometer, which enables estimation of the its noise floor and noise limits Describes recently design of ultra-low-noise (at level of 3 ng/vHz) IEPE seismic accelerometers and high temperature (up to 175 °C) triaxial and single axis miniature IEPE accelerometers Compares low-frequency noise in different JFETs and MOSFETs including measurement results of ultra-low-noise (at level of 0.6 nV/vHz) JFET Presents key factors for design of low-noise and high temperature IEPE accelerometer and their electronics Includes supplementary material: sn.pub/extras

Autorentext

Felix A. Levinzon received the M.S. degree in radio engineering from the Taganrog Radio Engineering Institute, Taganrog, Russia, in 1961 and the Ph.D. degree in electronic engineering from the National Research Institute for Physical, Technical and Radio-Technical Measurements (VNIIFTRI), Moscow, Russia, in 1974.

He was a Designer and Research Engineer with the VNIIFTRI from 1965 to 1993 in the field of low-noise electronics. In 1993 he emigrated to the USA. From 1996 up to now he is a Principal Engineer with Meggitt Orange County (formerly Endevco Corp.), Irvine, CA, USA. Dr. Levinzon is the author or coauthor more than 50 publications in scientific journals and international conference proceedings and holds nine patents. He is a member of the Institute of Electrical and Electronics Engineers (IEEE). His main field of interest and expertise is design electronics for vibration sensors, electronics for piezoelectric accelerometers including low-noise, high temperature and miniature analog electronics.

Inhalt

Introduction to Piezoelectric Accelerometers with Integral Electronics.- Piezoelectric Transducers Used for Piezoelectric Accelerometers with Integral Electronics.- Integral FET Amplifiers Used for IEPE Accelerometers.- Noise of a FET Amplifier.- Comparison of 1/f Noise and Thermal Noise in JFETs and MOSFETs.- Fundamental Noise Limit of an IEPE Accelerometer.- Noise of and IEPE Accelerometer.- Ultra-low-noise IEPE Seismic Accelerometers.- High-temperature, up to 175 º C, Miniature IEPE Accelerometers.