Porous Materials Preparation, Properties and Applications
Details
The semiconductors have energy gap separates the electron energy levels that are normally filled with electrons from those that are empty of electrons. Si, SiC and GaN have bond strengths suitable for high-temperature applications. Porous Si, SiC and GaN can be formed by photo-electro-chemical etching and those have unique properties and applications as electro-optical devices, fuel cells, sensors and actuators. The book presents for both experts and non-experts the knowledge and applications of porous materials having average and wide band gap. The book starts with an overview of porous Si includes preparation, characterization and morphology of Si solar cells. Followed by mechanism of porous SiC formation, and describe biological applications of porous SiC. Finally, produce porous GaN for different applications. This book is aimed to achieve work relating to porous semiconductors for manufacturing and technology. It is very appropriate for post-graduates, researchers and academicians in Nanotechnology and Nanoscience.
Autorentext
Assoc. Prof. Dr. Yarub Al-Douri has Ph.D in Materials Science. He worked at NUS, Singapore; TU Chemnitz, Germany; CNRS, France and in other universities. Dr. Al-Douri edited and authored four books till now and a lot of international papers and conferences. He is now Editor-in-Chief of International Journal of Nanoelectronics and Materials.
Weitere Informationen
- Allgemeine Informationen
- GTIN 09783659267161
- Sprache Englisch
- Genre Physik & Astronomie
- Größe H220mm x B220mm x T150mm
- Jahr 2012
- EAN 9783659267161
- Format Kartonierter Einband (Kt)
- ISBN 978-3-659-26716-1
- Titel Porous Materials Preparation, Properties and Applications
- Autor Yarub Al-Douri
- Untertitel Porous Si, SiC and GaN Materials Chacterisation, Analysis and Simulation
- Herausgeber LAP Lambert Academic Publishing
- Anzahl Seiten 160