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Short Circuit Requirements of Power Converters based upon Wide-Bandgap Semiconductors
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In power electronics designs, the evaluation and prediction of potential fault conditions on semiconductors is essential for achieving safe operation and reliability, being short circuit (SC) one of the most probable and destructive failures. Recent improvements on Wide-Bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium nitrite (GaN) enable power electronic designs with outstanding performance, reshaping the power electronics landscape. In comparison to Silicon (Si), SiC and GaN power semiconductors physically present smaller chip areas, higher maximum internal electric fields, and higher current densities. Such characteristics yield a much faster rise of the devices' internal temperatures, worsening their SC performance. In this way, this dissertation consists of a comprehensive investigation about SC on SiC MOSFETs, GaN HEMT, and GaN E-HEMT transistors, as well as contextualizing their particularities on SC performance by comparison with that of Si IBGTs. Moreover, an investigation towards how to prevent SC occurrences besides a review of available SC protection methods is presented.
Weitere Informationen
- Allgemeine Informationen
- GTIN 09783737609777
- Genre Technology Encyclopedias
- Lesemotiv Verstehen
- Anzahl Seiten 253
- Herausgeber kassel university press
- Größe H15mm x B148mm x T210mm
- Jahr 2021
- EAN 9783737609777
- Format Kartonierter Einband
- ISBN 978-3-7376-0977-7
- Titel Short Circuit Requirements of Power Converters based upon Wide-Bandgap Semiconductors
- Autor Douglas Pappis
- Gewicht 351g
- Sprache Englisch
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