Silicon Devices and Process Integration

Compiled from industrial and academic lecture notes and reflecting years of experience in the development of silicon devices, this book covers both their theoretical and practical aspects, and how their electrical properties and processing conditions interact.

This book includes discussion of silicon materials and electrical engineering properties as used in the design of analog components. Due to the author's background at Texas Instruments, the book will have an emphasis on newer process integration techniques and technology to help professional engineers in the field understand and develop electrical components.

Focuses on process integration techniques and technology Addresses both raw silicon material and demonstrates their use in components Includes supplementary material: sn.pub/extras

Klappentext

Silicon Devices and Process Integration is compiled from industrial and academic lecture notes and reflects years of experience in the development of silicon devices. It is prepared specifically for engineers and scientists in semiconductor research, development and manufacturing. It is also suitable for a one-semester course in electrical engineering and materials science at the upper undergraduate or lower graduate level. The book covers both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions.

Topics covered include: MOS structure, parameter extraction - Short and narrow-channel effects - CMOS mobility enhancement techniques - High-K gate dielectrics, advanced gate stacks - Low-K dielectrics and Cu interconnects - Analog devices and passive components - CMOS and BiCMOS process integration - DRAM, SRAM and NVM cell structures.

The book covers state-of-the-art silicon devices and integrated process technologies. It represents a comprehensive discussion of modern silicon devices, their characteristics, and interactions with process parameters.

Zusammenfassung

Silicon Devices and Process Integration covers state-of-the-art silicon devices, their characteristics, and their interactions with process parameters. It serves as a comprehensive guide which addresses both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. The book is compiled from the author's industrial and academic lecture notes and reflects years of experience in the development of silicon devices.

Features include:

• A review of silicon properties which provides a foundation for understanding the device properties discussion, including mobility-enhancement by straining silicon;

• State-of-the-art technologies on high-K gate dielectrics, low-K dielectrics, Cu interconnects, and SiGe BiCMOS;

• CMOS-only applications, such as subthreshold current and parasitic latch-up;

• Advanced Enabling processes and process integration.

  This book is written for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science.

  Inhalt
  Properties of the Silicon Crystal. Valence-bond and energy-band models. Thermal equilibrium statistics. Carrier transport mechanisms. Non-equilibrium conditions and carrier lifetime.- Junctions and Contacts. Ohmic, non-ohmic, and rectifying contacts. PN junctions, homo- and hetero-junctions. Contact und junction characterization, parameter extraction. Varactors.- Junction Field-Effect Transistor, JFET. Structure and mode of operation. Physics of JFET. JFET characterization and parameter extraction. High-voltage applications. Parasitic effects.- Bipolar Junction Transistor, BJT. Structure and mode of operation. Physics of BJT. Heterojunction Bipolar Transistor, HBT. Transistor characterization and parameter extraction. High-voltage applications.- Parasitic effects.