Silicon-Germanium (SiGe) Nanostructures

Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures.

Autorentext
Yasuhiro Shiraki is a Professor at Tokyo City University Advanced Research Laboratories, Japan. Noritaka Usami is a Professor at the Graduate School of Engineering, Nagoya University, Japan.

Inhalt

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Preface

Part I: Introduction

Chapter 1: Structural properties of silicon-germanium (SiGe) nanostructures

Abstract:

1.1 Introduction

1.2 Crystal structure

1.3 Lattice parameters

1.4 Phase diagram

1.5 Critical thickness

1.6 Structural characterization by X-ray diffraction

1.7 Future trends

1.8 Acknowledgement

Chapter 2: Electronic band structures of silicon-germanium (SiGe) alloys

Abstract:

2.1 Band structures

2.2 Strain effects

2.3 Effective mass

2.4 Conclusion

Part II: Formation of nanostructures

Chapter 3: Understanding crystal growth mechanisms in silicon-germanium (SiGe) nanostructures

Abstract:

3.1 Introduction

3.2 Thermodynamics of crystal growth

3.3 Fundamental growth processes

3.4 Kinetics of epitaxial growth

3.5 Heteroepitaxy

Chapter 4: Types of silicon-germanium (SiGe) bulk crystal growth methods and their applications

Abstract:

4.1 Introduction

4.2 Growth methods

4.3 Application of silicon-germanium (SiGe) bulk crystal to heteroepitaxy

4.4 Conclusion

Chapter 5: Silicon-germanium (SiGe) crystal growth using molecular beam epitaxy

Abstract:

5.1 Introduction

5.2 Techniques

5.3 Nanostructure formation by molecular bean epitaxy (MBE)

5.4 Future trends

Chapter 6: Silicon-germanium (SiGe) crystal growth using chemical vapor deposition

Abstract:

6.1 Introduction

6.2 Epitaxial growth techniques - chemical vapor deposition (CVD) (ultra high vacuum CVD (UHVCVD), low pressure CVD (LPCVD), atmospheric pressure CVD (APCVD), plasma enhanced CVD (PECVD))

6.3 Silicon-germanium (SiGe) heteroepitaxy by chemical vapor deposition (CVD)

6.4 Doping of silicon-germanium (SiGe)

6.5 Conclusion and future trends

Chapter 7: Strain engineering of silicon-germanium (SiGe) virtual substrates

Abstract:

7.1 Introduction

7.2 Compositionally graded buffer

7.3 Low-temperature buffer

7.4 Ion-implantation buffer

7.5 Other methods and future trends

Chapter 8: Formation of silicon-germanium on insulator (SGOI) substrates

Abstract:

8.1 Introduction: demand for virtual substrate and (Si)Ge on insulator (SGOI)

8.2 Formation of (Si)Ge on insulator (SGOI) by the Ge condensation method

8.3 Extension toward Ge on insulator

8.4 Conclusion

8.5 Acknowledgment

Chapter 9: Miscellaneous methods and materials for silicon-germanium (SiGe) based heterostructures

Abstract:

9.1 Introduction

9.2 Oriented growth of silicon-germanium (SiGe)on insulating films for thin film transistors and 3-D stacked devices

9.3 Heteroepitaxial growth of ferromagnetic Heusler alloys for silicon-germanium (SiGe)-based spintronic devices

9.4 Conclusion

Chapter 10: Modeling the evolution of germanium islands on silicon(001) thin films

Abstract:

10.1 A few considerations on epitaxial growth modeling

10.2 Introduction to Stranski-Krastanow (SK) heteroepitaxy

10.3 Onset of Stranski-Krastanow (SK) heteroepitaxy

10.4 Beyond the Stranski-Krastranow (SK) onset: SiGe intermixing

10.5 Beyond the Stranski-Krastanow (SK) onset: vertical and horizontal ordering for applications

10.6 Future trends: ordering Ge islands on pit-patterned Si(001)

Chapter 11: Strain engineering of silicon-germanium (SiGe) micro- and nanostructures

Abstract:

11.1 Introduction

11.2 Growth insights

11.3 Island engineering

11.4 Rolled-up nanotechnology

11.5 Potential applications

11.6 Sources of further information and advice

11.7 Acknowledgments

Part III: Material properties of SiGe nanostructures

Chapter 12: Self-diffusion an