Simulation of MOSFETs BJTs and JFETs

Semiconductor devices are generally analyzed with relatively simple equations or with detailed computer simulations. Most text-books use these simple equations and show device diagrams that are frequently very simplified and occasionally incorrect. For example, the carrier densities near the pinch-off point in MOSFETs and JFETs and the minority carrier density in the base near the reverse-biased base-collector junction are frequently assumed to be zero or near zero. Also the channel thickness at the pinch-off point is often shown to approach zero. None of these assumptions can be correct. The research in this book addresses these points. These simulation results in this book provide a more complete understanding of device physics and device operation in those regions usually not addressed in semiconductor device physics books.

Autorentext

Xuan Yang, Master of Science, Solid-state Electronics, Department of Electrical Engineering, Arizona State University. It was his advisor, Dieter K. Schroder, who guided him to to write this book.