Study of Atomic Layer Deposited HfO2/Si Interfaces

To continue scaling of MOS devices, SiO2 has to be replaced by high-K dielectric material. HfO2 is one of the prime materials with high dielectric constant has the potential to replace SiO2. HfO2 has been extensively studied by a number of authors. Still there are a number of issues that need to be addressed before to further scale down HfO2 based MOS devices. This book presents the studies done with HfO2 for future MOS device applications.

Autorentext

Savita Maurya - Degree of Doctor of Philosophy. Department of Electronics & Microelectronics, Indian Institute of Information Technology, Allahabad.