Subsecond Annealing of Advanced Materials

This book examines thermal processing of elemental semiconductors and materials including nanostructures with novel optoelectronic, magnetic, and superconducting properties. Covers compound semiconductors, dielectric composites and organic materials.

The thermal processing of materials ranges from few fem to seconds by Swift Heavy Ion Implantation to about one second using advanced Rapid Thermal Annealing. This book offers after an historical excursus selected contributions on fundamental and applied aspects of thermal processing of classical elemental semiconductors and other advanced materials including nanostructures with novel optoelectronic, magnetic, and superconducting properties. Special emphasis is given on the diffusion and segregation of impurity atoms during thermal treatment. A broad range of examples describes the solid phase and/or liquid phase processing of elemental and compound semiconductors, dielectric composites and organic materials.

Written by leading researchers in the field Describes annealing-related processes in semiconductor technology Includes a broad range of examples Includes supplementary material: sn.pub/extras

Klappentext
The thermal processing of materials ranges from few femtoseconds by Swift Heavy Ion Implantation to about one second using advanced Rapid Thermal Annealing. This book offers after an historical excursus selected contributions on fundamental and applied aspects of thermal processing of classical elemental semiconductors and other advanced materials including nanostructures with novel optoelectronic, magnetic, and superconducting properties. Special emphasis is given on the diffusion and segregation of impurity atoms during thermal treatment. A broad range of examples describes the solid phase and/or liquid phase processing of elemental and compound semiconductors, dielectric composites and organic materials.

Inhalt
From the Contents: The very early time.- Nanonet formation by constitutional supercooling of pulsed laser annealed, Mn-implanted germanium.- Metastable activation of dopants by solid phase epitaxial recrystallization.- Superconducting Ga-implanted Germanium.- Structural changes in SiGe/Si layers induced by fast crystallization.