Synthesis & Characterization of Nanodot Embedded MOS-C for the NVM

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Details

Achieving lower dimensional electronic device in today s world has been increased enormously. Miniaturization technique has been improved in connection to maintain noble device properties. Processes incorporated to nano range fabrication are always intricate, as various quantum size effects play important role in this regime. Understanding the physics of low-dimensional systems and the operation of next-generation electronics will be helpful in bringing revolutionary changes to mankind. Phenomena surrounding the nanoparticles have been discussed and the discussion has been divided into two broad categories: synthesis and characterization of the nanoparticles embedded MOS capacitor. Capacitance peaks in the inversion region due to carrier tunneling into the quantum dot and Coulomb blockade charging in quantum dot has been observed, which elucidated the charge storing phenomena of nanoparticles.

Autorentext

Mitra Barun Sarkar is currently assistant professor in E.C.E department of National Institute of Technology, Agartala (NIT A), India. He has several publications in reputed journals. His area of research interests are Nano Electronics, Semiconductor and Opto- electronic devices, RF & Microwave Engineering.


Klappentext

Achieving lower dimensional electronic device in today's world has been increased enormously. Miniaturization technique has been improved in connection to maintain noble device properties. Processes incorporated to nano range fabrication are always intricate, as various quantum size effects play important role in this regime. Understanding the physics of low-dimensional systems and the operation of next-generation electronics will be helpful in bringing revolutionary changes to mankind. Phenomena surrounding the nanoparticles have been discussed and the discussion has been divided into two broad categories: synthesis and characterization of the nanoparticles embedded MOS capacitor. Capacitance peaks in the inversion region due to carrier tunneling into the quantum dot and Coulomb blockade charging in quantum dot has been observed, which elucidated the charge storing phenomena of nanoparticles.

Weitere Informationen

  • Allgemeine Informationen
    • GTIN 09783659670398
    • Genre Elektrotechnik
    • Sprache Englisch
    • Anzahl Seiten 56
    • Größe H220mm x B150mm x T4mm
    • Jahr 2015
    • EAN 9783659670398
    • Format Kartonierter Einband
    • ISBN 3659670391
    • Veröffentlichung 05.02.2015
    • Titel Synthesis & Characterization of Nanodot Embedded MOS-C for the NVM
    • Autor Mitra Barun Sarkar , Sabyasachi Mukhopadhyay
    • Untertitel An Innovative Approach in Nano-Technology
    • Gewicht 102g
    • Herausgeber LAP Lambert Academic Publishing

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