Tantalum and Niobium-Based Capacitors

Provides a single-source reference to the science, technology, and applications of Tantalum and Niobium-based capacitors Focuses on Polymer Tantalum capacitors, with rapidly growing applications in special and commercial electronics

Discusses in detail conduction and degradation mechanisms in amorphous dielectrics and multilayer capacitor structures with amorphous dielectrics, such as metal-insulator-semiconductor (MIS) structures with inorganic and organic semiconductors, as well as MOSFET transistors with high k dielectrics

Autorentext
Yuri P. Freeman is director of advanced research in the Tantalum (Ta) business unit and a member of the Advance Technology Group (ATG) at KEMET Electronics. The ATG is responsible for KEMET's technical strategy, which includes cooperation with Universities on fundamental issues in passive electronic components. Yuri P. Freeman received his Ph.D. in physics of the solid state from Kharkov Technical University (KhTU) in Ukraine. Prior to KEMET, he worked as principal scientist at Elitan, the largest producer in the Soviet Union of Ta and Niobium (Nb) capacitors, and at Vishay Sprague in the USA. Simultaneously with working in industry, he taught Physics of Electronic Components in the KhTU and now in the Clemson University in the USA. Yuri P. Freeman has published more than 30 papers and received 26 patents in the field of physics and technology of Ta and Nb-based capacitors.

Inhalt
Introduction.- Chap1: Major Degradation Mechanisms.- Chap2: Basic Technology.- Chap3: Applications.- Conclusion.
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