Temperature Measurement during Millisecond Annealing

Denise Reichel studies the delicate subject of temperature measurement during lamp-based annealing of semiconductors, in particular during flash lamp annealing. The approach of background-correction using amplitude-modulated light to obtain the sample reflectivity is reinvented from rapid thermal annealing to apply to millisecond annealing. The author presents a new method independent of the lamp operation to obtain this amplitude modulation and derives a formula to describe the process. Further, she investigates the variables of the formula in depth to validate the method's suitability for background-corrected temperature measurement. The experimental results finally proof its power for elevated temperatures.

Publication in the field of natural sciences Includes supplementary material: sn.pub/extras

Autorentext

Dr. Denise Reichel currently works in technical sales and consulting for temperature measurement needs and as a lecturer for thermodynamics and heat and mass transfer.

Inhalt
Introduction and motivation.- Fundamentals of flash lamp annealing of shallow Boron-doped Silicon.- Fundamentals of surface temperature measurements during flash lamp annealing.- Concept of ripple pyrometry during flash lamp annealing.- Ripple pyrometry for flash lamp annealing.- Experiments ripple pyrometry during flash lamp annealing.- Closing discussion and outlook.