The Development in Gallium-Nitrides Semiconductors Based Technology

III-nitrides semiconductors, specifically the GaN-based materials, including the binary GaN and related alloys with InN and AlN, such as the ternary AlGaN and InGaN as well as the quaternary InAlGaN have been intensively investigated in recent years because of the potential applications for optoelectronic devices operating in short wavelength spectral range and in high power and high temperature electronic devices. GaN-based materials are also ideal for the fabrication of high responsive and visible blind UV detectors because of the unique properties that encompass wide and direct band gap, high absorption coefficients, and sharp cutoff of the wavelength detection. The high breakdown voltage and high saturation velocity also enable the use of GaN-based materials for high-speed device operation and high power applications, such as power amplifiers for wireless base stations, low noise amplifiers, and high power switches. Sensing devices are another important application of the GaN-based materials, especially in harsh environments owing to the high thermal and chemical stability of these materials.

Autorentext

Dr. Mansour S. Farhan, Professor am College of Engineering/Wasit University. Dr. Hasan F. Khazaal, Assistenzprofessor am College of Engineering/Wasit University, hat Erfahrung in der Herstellung von Dünnschichten für optoelektronische Geräte. Er hat Erfahrung in der Herstellung und Abstimmung von Mikrowellenschaltungen und in der Bildungstechnologie.