Ti-Based Schottky Contacts to n-InP: Electronic Device Applications

In recent years, group III-V semiconductors have drawn considerable attention because they are technologically important as their electronic properties can be varied easily with different dopants. It also has a higher mobility, with a high peak-to-valley ratio in the velocity electric-field characteristics. These qualities are essential for high-speed microwave field-effect transistors, transferred electron oscillators and high-speed logics. The energy gap of InP is close to the optimum value for efficient conversion of solar radiation into electric power by single-junction photo voltaic cells. Metal-semiconductor (MS) structures play an important role in the device based on the III-V compound semiconductors in the form of Schottky barrier diodes (or) ohmic contacts. The fabrication of reliable and well-controlled electrical contacts is the key to the successful operation of almost all solid-state semiconductor devices. The continuous scaling of microelectronic devices to sub-microelectronic dimensions increases the need for high performance and rectifies contacts. Therefore, the formation of a high Schottky barrier height is an important research issue in InP device development.

Autorentext

Prof. Reddy has published more than 190 articles in referred journals, and has been author or co-author of over 125 conference papers. Prof. Reddy has successfully guided 20 PhDs in the field of Advanced Electronic Materials (GaN). His current research interest is GaN/InP based metal/insulator/semiconductors (MIS) and heterostructures.