Toward Quantum FinFET

This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, and tunneling transport.

Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effect Provides the keys to understanding the emerging area of the quantum FinFET Written by leading experts in each research area Describes a key enabling technology for research and development of nanofabrication and nanoelectronic devices

Inhalt

Preface
Chapter 1: Simulation of Quantum Ballistic Transport in FinFETs
Chapter 2: Model for quantum confinement in nanowires and the application of this model to the study of carrier mobility in nanowire FinFETs
Chapter 3: Understanding the FinFET Mobility by Systematic Experiments
Chapter 4: Quantum Mechanical Potential Modeling of FinFET
Chapter 5: Physical insight and correlation analysis of finshape fluctuations and work-function variability in FinFET devices
Chapter 6: Characteristic and Fluctuation of Multi-Fin FinFETs
Chapter 7: Variability in Nanoscale FinFET Technologies
Chapter 8: Random Telegraph Noise in Multi-Gate FinFET/Nanowire Devices and the Impact of Quantum Confinement
Chapter 9: Investigations on Transport Properties of Poly-Silicon Nanowire Transistors Featuring Independent Double-Gated Configuration under Cryogenic Ambient
Chapter 10: Towards Drain extended FinFETs for SoC applications
Chapter 11: Modeling FinFETs for CMOS Applications
Chapter 12: Enhanced Quantum Effects in Room-Temperature Coulomb Blockade Devices Based on Ultrascaled finFET Structure
Chapter 13: Single-Electron Tunneling Transistors Utilizing Individual Dopant Potentials
Chapter 14: Single Electron Transistor and Quantum Dots on Graphene
Chapter 15: Terahertz Response in Schottky Warp-Gate Controlled Single Electron Transistors
Index