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Trends In Capacitorless Dynamic Random Access Memory
Details
Dynamic Random Access Memory (DRAM) is a type of computer memory known for its structural simplicity, consisting of just one transistor and one capacitor per bit. These capacitors store data as electrical charges, making DRAM highly efficient in terms of space and cost. However, its dynamic nature requires periodic refreshing to prevent data loss due to capacitor leakage, distinguishing it from static memory like SRAM. One significant advancement in DRAM technology is the 3T-1D design, which eliminates the need for external capacitors and offers advantages in scalability, process complexity, and compatibility with logic processing steps. Despite its inherent challenges, DRAM's high density and cost-effectiveness continue to make it a vital component in modern computing systems.
Autorentext
O Dr. Yogesh Thakare recebeu o grau de doutoramento em eletrónica e telecomunicações da Universidade Sant Gadge Baba Amravati, Amravati, Índia, em 2020. Trabalha atualmente como professor assistente na Faculdade de Engenharia e Gestão Shri Ramdeobaba, Nagpur, Maharashtra, Índia.
Weitere Informationen
- Allgemeine Informationen
- GTIN 09786206782445
- Genre Electrical Engineering
- Sprache Englisch
- Anzahl Seiten 104
- Herausgeber LAP LAMBERT Academic Publishing
- Größe H220mm x B150mm x T7mm
- Jahr 2023
- EAN 9786206782445
- Format Kartonierter Einband
- ISBN 6206782441
- Veröffentlichung 11.10.2023
- Titel Trends In Capacitorless Dynamic Random Access Memory
- Autor Yogesh Thakare
- Untertitel DE
- Gewicht 173g