Tribological Phenomena in Chemical Mechanical Polishing

Chemical Mechanical Polishing (CMP) is an indispensable step in the manufacturing of semiconductor integrated circuits. It can be used to remove a large variety of dielectric and metallization materials such as silicon, silicon oxide, tungsten, copper, aluminum and is currently the technique that can achieve unmatched global planarization of semiconductor wafers. In meeting the requirements for difficult to polish low-k materials, CMP is set to remain as a key process in the semiconductor industry for at least another decade. Despite its success, the physical phenomena of the process are still not well understood. This book presents a fundamental study from a tribological perspective and unveils the complex interplay of fluid pressure, friction, wear and other parameters of the process. There is a wide application of concepts and theoretical models supported by experimental data that would be useful to engineers, academics and students working on this process. It should also appeal to those working on other types of material removal technologies as well as those in the field of tribology.

Autorentext

Sum Huan Ng, Ph.D.: Studied Mechanical Engineering at Georgia Institute of Technology. Associate Research Scientist at the Singapore Institute of Manufacturing Technology, Singapore.