Ultra-Low Voltage Nano-Scale Memories

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The goal of Ultra-Low Voltage Nano-Scale Memories is to provide a detailed explanation of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically discussed in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs. Moreover, various kinds of on-chip voltage converters necessary to solve the problems with internal power-supply managements are widely and deeply discussed.

A lot of knowledge that authors have acquired to date, and circuits the authors regard as important are covered from the basics to the state-of-the-art. Thus, the book is beneficial to students and engineers interested in ultra-low voltage nano-scale LSIs.


Discusses the emerging problems between the device, circuit, and system levels in terms of reliable high-speed operations of memory cells and peripheral logic circuits Presents the essential differences in ultra-low voltage operations between DRAMs and SRAMs Covers the basics to the state of the art

Klappentext
Ultra-Low Voltage Nano-Scale Memories provides an in-depth discussion of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically covered in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs. Moreover, various kinds of on-chip voltage converters necessary to solve problems with internal power-supply managements are extensively discussed. This authoritative monograph addresses these design challenges for memory and circuit engineers as well as for researchers and students who are interested in ultra-low voltage nano-scale memory LSIs.


Zusammenfassung


Ultra-Low Voltage Nano-Scale Memories provides an in-depth discussion of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically covered in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs. Moreover, various kinds of on-chip voltage converters necessary to solve problems with internal power-supply managements are extensively discussed. This authoritative monograph addresses these design challenges for memory and circuit engineers as well as for researchers and students who are interested in ultra-low voltage nano-scale memory LSIs.


Inhalt
An Introduction to LSI Design.- Ultra-Low Voltage Nano-Scale DRAM Cells.- Ultra-Low Voltage Nano-Scale SRAM Cells.- Leakage Reduction for Logic Circuits in RAMs.- Variability Issue in the Nanometer Era.- Reference Voltage Generators.- Voltage Down-Converters.- Voltage Up-Converters and Negative Voltage Generators.- High-Voltage Tolerant Circuits.

Weitere Informationen

  • Allgemeine Informationen
    • GTIN 09780387333984
    • Genre Elektrotechnik
    • Auflage 2007
    • Editor Kiyoo Itoh, Hitoshi Tanaka, Masashi Horiguchi
    • Sprache Englisch
    • Lesemotiv Verstehen
    • Anzahl Seiten 360
    • Größe H241mm x B160mm x T24mm
    • Jahr 2007
    • EAN 9780387333984
    • Format Fester Einband
    • ISBN 0387333983
    • Veröffentlichung 22.08.2007
    • Titel Ultra-Low Voltage Nano-Scale Memories
    • Untertitel Series on Integrated Circuits and Systems, Integrated Circuits and Systems
    • Gewicht 705g
    • Herausgeber Springer US

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