Wir verwenden Cookies und Analyse-Tools, um die Nutzerfreundlichkeit der Internet-Seite zu verbessern und für Marketingzwecke. Wenn Sie fortfahren, diese Seite zu verwenden, nehmen wir an, dass Sie damit einverstanden sind. Zur Datenschutzerklärung.
VARIATION OF POPULATION IN SILICON WITH P-111Cd annealing temperature
Details
Over the last few years researchers have made many works on semiconductors as long as semiconductor technology plays a great role in developing the technologies we are using now a days. therefore my work has an input on impacts of point defects in semiconductor. This work will help researchers who are doing on efficiency of semiconductors and the i somewhat important methods used also for other researchers who are out of Physics such as medicine, veterinary to determin the structures of DNA in human and other animals. people who are interested on using this method for researches can refer this book. generally this book provides information about the effect of annealing temperature in the formation of complex Cd-P population in silicon. It also provides information for further study of point defects in semiconductor finally it gives idea about how researches will held on.
Autorentext
Temesgen Yirdaw achieved his M.Sc. He studied Physics at Addis Ababa University. Currently, he is instructor at Mekelle university, Ethiopia.
Weitere Informationen
- Allgemeine Informationen
- GTIN 09783639256451
- Sprache Englisch
- Genre Physik & Astronomie
- Größe H220mm x B220mm
- Jahr 2010
- EAN 9783639256451
- Format Kartonierter Einband (Kt)
- ISBN 978-3-639-25645-1
- Titel VARIATION OF POPULATION IN SILICON WITH P-111Cd annealing temperature
- Autor Temesgen Yirdaw Berhe , Genene Tessema
- Untertitel Using Nuclear Method, which is Perturbed Angular Correlation
- Herausgeber VDM Verlag Dr. Müller e.K.
- Anzahl Seiten 60