ZnCdSe Cladded Quantum Dot Based EL and Nonvolatile Memory Devices

This book presents devices which are fabricated using high energy gap ZnyCd1-ySe cladded ZnxCd1-xSe quantum dots (yx). These QDs are pseudomorphic (nearly lattice-matched core and the shell of the dot)in nature which makes them have less stress and dislocation. The QD devices are unique as they utilize the pseudomorphic structure of these QDs. One of the devices mentioned in this book is a floating quantum dot gate nonvolatile memory where cladded ZnCdSe quantum dots are deposited on single crystalline gate insulator (ZnMgS/ZnMgSe). The cladded dots are grown using a novel improved methodology of photo-assisted microwave plasma metalorganic chemical vapor deposition (PMP-MOCVD) enhanced reactor. The composition of quantum dot cladding, which relates to the value of y in ZnyCd1-ySe, is engineered by the intensity of ultraviolet light which controls the incorporation of zinc in ZnCdSe. The quantum dot quality is comparable to those deposited by other methods. Characteristics and modeling of the II-VI quantum dots, as well as, two diverse types of devices are presented in this book. Also the fabrication of the QDs and the devices will be talked about in detail.

Autorentext

Fuad Al-Amoody obtained his PhD from University of Connecticut in Electrical Engineering with a concentration in Nanophotonics and devices. He also has a double major in Physics and Computer science and minor in Mathematics from Southern Connecticut State University. He is currently employed as an Engineer at Intel Corp.